The UT28F256LVQLE, 32K x 8 PROM, is a high performance, asynchronous, radiation-hardened memory device.  The PROM features fully asynchronous operation requiring no external clocks or timing strobes.  An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256LVQLE.  The combination of radiation hardness, fast access time, and low power consumption make the PROM ideal for high speed systems designed for operation in harsh environments.

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Overview

  • Features:

  • 256Kb, 32K x 8-bit 

  • +3.3V Single Supply Voltage

  • Supported by industry standard programmer

  • 65ns maximum address access time (-55°C to +125°C)

  • TTL compatible input and TTL/CMOS compatible output levels

  • Three-state data bus

  • Low operating and standby current

    • Operating 50mA maximum @ 15.4MHz

      • Derating 1.7mA/MHz

    • Standby 1.0mA maximum (post-rad)

  • No post program conditioning

  • Applications:

  • Boot Code Storage for Microcontrollers and Microprocessors

  • Operational Environment:

  • Temperature Range: -55°C to +125°C

  • Total Ionizing Dose: <1000 krad (Si)

  • SEL Immune: ≤110 MeV-cm2/mg

  • Physical:

  • 28-Lead Ceramic Flatpack
    50 mil pitch

  • Power:

  • 40mW (typical during 100% read cycling)

  • Flight Grade:

  • QML-Q, QML-V

  • Export Control Classification Number (ECCN):

  • 9A515.e.2

  • SMD Number:

  • 5962-01517

ADDITIONAL SPECIFICATIONS

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Key Tech Specs
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