Overview
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CAES UT8SDMQ64M48 SDRAM

Frontgrade has an extensive memory portfolio developed to handle the demands of harsh space and terrestrial environments.

The UT8SDMQ64M48 is a high performance, highly integrated Synchronous Dynamic Random Access Memory (SDRAM) multi-chip module (MCM).  The device is 3.0Gb in density and organized as 64Mx48 (16M x 48 x 4 banks). Read and write accesses to the DRAM are burst oriented; an auto-refresh mode is provided, along with a power-saving, power-down mode. Ideal for fault tolerant systems.

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Overview
Key Tech Specs
  • Features:

  • 3.0Gb, 64Mx48 (16Meg x 48 x 4 banks) 

  • 100MHz Maximum Frequency

  • LVTTL Compatible with Multiplexed Address 

  • Fully Synchronous 

  • Internal Pipelined Operation 

  • Programmable Burst Lengths of 1, 2, 4, 8, or Full Page 

  • Auto-Precharge includes Concurrent Auto Precharge and Autorefresh Mode 

  • 32ms, 8,192-cycle refresh

  • Single +3.3V Power Supply 

  • Applications:

  • Ideal for fault tolerant designs in harsh space environments

  • Operational Environment

  • Temperature Range: -40°C to +105°C

  • Total Ionizing Dose: 50 krad (Si)

  • SEL Immune: ≤111 MeV-cm2/mg

  • SEU Event Rate: 1.3E-10 events/bit-day

  • Physical:

  • 128-Pin Ceramic Quad Flatpack

  • Typical Power:

  • 2.0W (max)

  • Flight Grade:

  • QML-Q, QML-Q+ Frontgrade Manufacturing Flow

  • Export Control Classification Number (ECCN):

  • 9A515.e.2

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Key Tech Specs
Downloads

Datasheet

Datasheet-UT8SDMQ64M40_48.pdf

 

Application Notes

App-Note-UT8SDMQ64M4x_TimingAndSignalIntegrity.pdf

 

Technical Notes

Tech-Note-UT8SDMQ64M4x-Bit-Errors-Due-to-Aging.pdf

 

IBIS Model

UT8SDMQ64M48.zip

 

Memory Power Calculator

Spreadsheet_MemoryPowerCalculator_final ver2016.1.xlsx 

 

ADEPT Notifications

SPO-2013-PCN-0005
Correct the TLZ parameter

SPO-2014-PA-0002
IBIS Model Inaccuracy

SPO-2014-PIN-0002
Hold notification for 100Krad(Si) RHA level on 3.0Gb SDRAM

SPO-2020-PIN-0001
Addition of alternative burn-in conditions and reinstatement of RHA level “R” (100krad) for 2.5Gb and 3.0Gb SDRAM modules

SPO-2021-D-002
Discontinuations of device type 02 and addition of device type 03 for SMD 5962-10230

SPO-2021-PA-0001A
CAES Radiation-Hardened 2.5 AND 3.0GBit SDRAM MCM Non-conformance Advisory

SPO-2021-D-0005
Removal of 100krad device offering due to exhausted die inventory for UT8SDMQ64M48, all device types.

SPO-2023-D-0001
Diminished supply of SDRAM UT8SMDQ64M40 and UT8SMDQ64M48

ECAD Models

Use the link(s) below to view the ECAD Model for this product.

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