The UT8MR8M8 is high performance, space grade, 64Mb non-volatile Magneto-Resistive Random Access Memory (MRAM) with proven flight heritage.
Based on proven technology from Everspin, the 64Mb MRAM provides a high reliable non-volatile memory with SRAM performance and intrinsic radiation hardened memory that is immune to Single Event Upsets (SEU), low voltage Single Event Latchup (SEL) and Single Event Gate Rupture (SEGR). The UT8MR2M8 provides unlimited endurance and a greater than 20-year retention across the specified temperature range.
The 64Mb Non-Volatile MRAM, UT8MR8M8-EVB, evaluation board provides the user with a flexible platform to configure, control, access and read/write data to the UT8MR8M8 device.
- Features:
-
64Mb, 8M x 8-bit
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+3.3 V Single Supply Voltage
-
Functionally Compatible with Traditional Asynchronous SRAMs
-
Automatic Data Protection with Low-Voltage Inhibit Circuitry to Prevent Writes on Power Loss
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50 ns Read/Write Access Time
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Data Retention 20 years (-40°C to +105°C)
-
Programming Endurance Unlimited for 20 years (-40°C to +105°C)
- Applications:
-
Boot Code Storage for Microcontrollers and Microprocessors
-
Non-Volatile RadHard Memory for ASICs
-
FPGA Configuration Storage
- Operational Environment
-
Temperature Range: -40°C to +105°C
-
Total Ionizing Dose: <1000 krad (Si)
-
SEL Immune: ≤112 MeV-cm2/mg
-
SEU Immune: Memory Cell 112 MeV-cm2/mg @ 25°C
- Physical:
-
64-pin CFP, 24.38 mm x 48.74 mm, 50 mil
- Power:
- ~15 mW/MHz (read), Typical
- Flight Grade:
- QML-Q, QML-Q+, QML-V
- Export Control Classification Number (ECCN):
- 9A515.e.2
- SMD Number:
- 5962-13207
ADDITIONAL SPECIFICATIONS
Datasheet
Application Notes
App-Note-UT8MRxM8-MagneticImmunity.pdf
App-Note-UT8MRxM8-SEFI-Workarounds.pdf
Memory Power Calculator
Spreadsheet_MemoryPowerCalculator_final ver2016.1.xlsx
IBIS Model
ADEPT Notifications
SPO-2016-PIN-0001
To notify users of QML grade UT8MR8M8 64M MRAMs of the Multi-Bit Error (MBE) detection pin behavior. Screen reader support enabled.
SPO-2019-D-0009
End of life and replacement device notification for MRAM production due to process and qualification changes.
SPO-2019-PIN-0001
This PIN adds new devices type 03 and 04 and describes the changes to the SMD due to process and qualification flow changes. This PIN also provides notification and correction of a requirement contained in the SMD.
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