Key Features:

• 28 nm FD-SOI technology for SWaP and radiation performance
• 96K programmable logic cells
• 7.3 Mb (EBR and LRAM) embedded memory
  • Max Image Size (with maximum LRAM and EBR) is 22.333 Mb
• Gen1/2/3 PCIe, SGMII/XGMII (Gigabit Ethernet), LVDS, LVCMOS and more interfaces
• Dual 1 MSPS, 12-bit SAR ADCs
• Expert radiation and FPGA technical support
• Comprehensive suite of development tools and fault-tolerant libraries
• Programmable Core
  • Low-power mode
  • High-performance mode
  • High embedded memory count
  • DSP blocks
• High Bandwidth Interfaces
  • 8 SERDES lanes up to 10 Gbps
  • Flexible multi-protocol PCS
  • Supports 10GE, PCIe Gen3, DP/eDP, sLVS-EC, CoaXPress
• Fast Programmable I/O
  • Diff I/O (1.5 Gbps)
  • LVDS, subLVDS, SGMII
  • DDR3 (1066 Mbps)
  • Up to 306 total I/O

Physical:

• Plastic package, SnPb balling (x484)
• 19 mm x 19 mm, 0.8 mm pitch

Operational Environment:

• Temperature Range: -40°C to 125°C
• Total Ionizing Dose: <100 krad (Si)
• SEL Immune: ≤80 MeV-cm2/mg

Power:

• 600 mW (typical)

Voltage:

• Supply Voltage (Core): 1.0V
• Supply Voltage (Aux): 1.8V
• I/O Voltage Range: 1.0V - 3.3V

Primary I/O:

• LVDS
• Soft D-PHY
• SGMII
• PCIe
• GbE

Phase-Locked Loop (PLL):

• 4

SERDES:

• 8 Lanes

Supported Memory:

• DDR2/3L x8, x16, x32 & x64
• LPDDR2/3/4  x8, x16, x32 &x64

ADC:

• 2x 1 MSPS
• 12-bit SAR

Security:

• Bit stream encryption (AES-256) & authentication (ECDSA)