Frontgrade memory products are for your applications requiring the highest reliability in extreme environments.
The UT8ER512K32 is a 16Mb, 512K x 32, high performance CMOS static RAM with EDAC. This device has a power-down feature that reduces power consumption by more than 90% when deselected. Ideal for fault tolerant designs in harsh space environments.
- Features:
- 16Mb, 512K x 32
- EDAC
- 20ns Read, 10ns Write Maximum Access Time
- Compatible with Industry Standard 512K x 32 SRAMs
- TTL Compatible Inputs and Output Levels
- Three-State Bidirectional Data Bus
- +3.3V I/O Voltage, +1.8V Core Voltage
- Applications:
- Ideal for fault tolerant designs in harsh space environments
- Operational Environment:
- Temperature Range: -55°C to +125°C
- Total Ionizing Dose: <100 krad (Si)
- SEL Immune: ≤111 MeV-cm2/mg
- SEU Rate: <8.1 x E-16 errors/bit-day
- Physical:
- 68-Pin Ceramic Quad Flatpack
- Power:
- 5W (maximum package power dissipation)
- Flight Grade:
- QML-Q, QML-V
- Export Control Classification Number (ECCN):
- 9A515.e.1
- SMD Number:
- 5962-06261
ADDITIONAL SPECIFICATIONS
Datasheet
Application Notes
App-Note-SRAM-ReadOperations.pdf
App-Note-UT8ER512K32-DesignHandbook.pdf
Memory Power Calculator
Spreadsheet_MemoryPowerCalculator_final ver2016.1.xlsx
IBIS Model
ADEPT Notifications
SPO-2018-PIN-0003
SMD/Datasheet corrections to include missing AC timing specs and edir VDD and VIO absolute max rating
SPO-2012-PA-0001
Corrected and New AC parameters for EDAC register access
SPO-2012-PCN-0007
SEE Limits corrections
SPO-2015-AL-0001
An internal review determined Total Ionizing Dose (TID) testing bias circuit was limiting current when performing radiation testing to 100 krad(Si) per MIL-STD-883, M1019, Condition A. As a result of this finding, samples from previously delivered wafer
SPO-2015-PIN-0003
Product Information Notice is to inform the industry about the CAES SRAMs low power read architecture
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