Frontgrade memory products are for your applications requiring the highest reliability in extreme environments.
The UT8R512K8 is a 4Mb, high performance CMOS static RAM. This device has a power-down feature that reduces power consumption by more than 90% when deselected and well suited for fault tolerant designs for low earth orbits.
- Features:
- 4Mb, 512K x 8
- 15ns Maximum Access Time
- Asynchronous Operation
- Compatible with Industry Standard 512K x 8 SRAMs
- TTL Compatible Inputs and Output Levels
- Three-State Bidirectional Data Bus
- +3.3V I/O Voltage, +1.8V Core Voltage
- Applications:
- Ideal for fault tolerant designs for low earth orbits
- Operational Environment:
- Temperature Range:-55°C to +125°C
- Total Ionizing Dose:<100 krad (Si)
- SEL Immune:≤100 MeV-cm2/mg
- SEU Rate:<8.9 x E-10 errors/bit-day
- Physical:
- 36-Pin Ceramic Flatpack
- Power:
- 1.2W
- Flight Grade:
- QML-Q, QML-V
- Export Control Classification Number (ECCN):
- 9A515.e.1
- SMD Number:
- 5962-03235
ADDITIONAL SPECIFICATIONS
Datasheet
Application Notes
App-Note-SRAM-ReadOperations.pdf
Memory Power Calculator
Spreadsheet_MemoryPowerCalculator_final ver2016.1.xlsx
IBIS Model
ADEPT Notifications
SPO-2015-PIN-0003
Product Information Notice is to inform the industry about the CAES SRAMs low power read architecture
SPO-2018-PIN-0003
SMD/Datasheet corrections to include missing AC timing specs and edir VDD and VIO absolute max rating
SPO-2020-D-0002
Product discontinuance notice to announce the end of life (EOL) 300krad TID parts for SMD numbers 04227, 03235, and 03236
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