Gallium Nitride Broadband Amplifier
| Part Number | Environment | Min/Max Frequency | Power Out (W) typical | VDC Input | Operating Temp (Degrees C) | Size (W x L x H) | Enable/Disable (uSec) Typical |
|---|---|---|---|---|---|---|---|
| SSPA 0.001-6.000-5 | Ground/Air | 0.001 - 6.0 GHz | 5 | 28 Vdc | -40 to +85 | 2.5 x 6.4 x 1 | 20 |
Aethercomm Model Number SSPA 0.001-6.000-5 is a medium power, super broadband, Gallium Nitride (GaN) RF amplifier that operates from 1.0 MHz to 6.0 GHz.
This is a solid state power amplifier with almost infinite bandwidth! This PA is ideal for broadband military platforms as well as commercial applications because it is robust and offers high power over an extremely large bandwidth with decent power added efficiency.
This GaN power amplifier was designed for broadband jamming and communication system platforms or any system or laboratory that just needs almost infinite band width up to 6 GHz. It operates with a base plate temperature of 85C. It is packaged in a modular housing that is approximately 2.5″” (width) by 6.4″” (long) by 1.00″” (height). Our high power amplifier has a typical saturated output power of 5-10 watts at room temperature. Noise figure at room temperature is 10 dB typical.
This GaN broadband RF power amplifier offers a typical gain of 30-40 dB with a typical power gain flatness of ± 4 dB. The power and gain flatness across the band is extremely fl at for the bandwidth. Input VSWR is 2.0:1 typical. Class AB quiescent current is ~1.17 amps typical employing a +28 Vdc supply. Typical second and third harmonic values can be found on the next page of this data sheet. Typical OIP3 levels are 37 to 43 dBm with two tones at 27 dBm each tone with a 1MHz spacing.
This SSPA includes an external DC blanking command that enables and disables the module in 20.0 uSec maximum. Typical on/off timing values are 10uSec. A logic low or open circuit disables the (GaN) RF amplifier. A logic high will enable the amplifier. Standard features include over/under voltage protection and reverse polarity protection. The GaN broadband RF power amplifier’s output is fully protected from an open or short circuit presented to this port with no damage. Input/output RF connectors are SMA female. DC and command voltages are accessible via a DSUB connector.
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This GaN RF amplifier operates from –40C to +85C base plate temperature. Summary test data is found on sheet two of this data sheet at room temperature.
• Gallium Nitride Broadband Power Amplifier
• Operation from 1.0 MHz to 6.0 GHz min
• Small Signal Gain 40 dB typical
• 5-10 watts PSat typical