The UT8MR2M8 is high performance, space grade, 16Mb non-volatile Magneto-Resistive Random Access Memory (MRAM) with proven flight heritage.
Based on proven technology from Everspin, the 16Mb MRAM provides a high reliable non-volatile memory with SRAM performance and intrinsic radiation hardened memory that is immune to Single Event Upsets (SEU), low voltage Single Event Latchup (SEL) and Single Event Gate Rupture (SEGR). The UT8MR2M8 provides unlimited endurance and a greater than 20-year retention across the specified temperature range.
- Features:
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16Mb, 2M x 8-bit
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+3.3V Single Supply Voltage
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Functionally Compatible with Traditional Asynchronous SRAMs
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Automatic Data Protection with Low-Voltage Inhibit Circuitry to Prevent Writes on Power Loss
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50 ns Read/Write Access Time
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Data Retention 20 years (-40°C to +105°C)
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Programming Endurance Unlimited for 20 years (-40°C to +105°C)
- Applications:
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Boot Code Storage for Microcontrollers and Microprocessors
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Non-Volatile RadHard Memory for ASICs
- Operational Environment:
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Temperature Range: -40°C to +105°C
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Total Ionizing Dose: <1000 krad (Si)
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SEL Immune: ≤112 MeV-cm2/mg
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SEU Immune: Memory Cell 112 MeV-cm2/mg @ 25°C
- Physical:
-
40-pin CFP, 20.52 mm x 24.41 mm, 25 mil
-
40-pin CFP, 20.52 mm x 31.29 mm, 50 mil
- Power:
- ~10mW/MHz (read), Typical
- Flight Grade:
- QML-Q, QML-Q+, QML-V
- Export Control Classification Number (ECCN):
- 9A515.e.2
- SMD Number:
- 5962-12227
ADDITIONAL SPECIFICATIONS
Datasheet
Application Notes
App-Note-UT8MRxM8-MagneticImmunity.pdf
App-Note-UT8MRxM8-SEFI-Workarounds.pdf
Memory Power Calculator
Spreadsheet_MemoryPowerCalculator_final ver2016.1.xlsx
IBIS Models
ADEPT Notifications
SPO-2014-PA-0008
UT8MR2M8 16M MRAMs Long Term Temperature Accelerated Random Single Bit Read Anomalies
SPO-2019-D-0010
DMSMS, discontinue for product type 01&02 and create type 03&04 that has cold probe
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