UT8MRQ4G32B 4Gb Parallel MRAM
| Part Number | Flight Grade | LET (MeV-cm^2/mg) | TID krad(Si) | Density | Configuration | Access Time | Supply Voltage | Package |
|---|---|---|---|---|---|---|---|---|
| UT8MRQ4G32B | PEM INST-001 Level 2 | ≤78 | 100 | 4Gb | 128M x 32 Parallel | 45ns | +2.5V to +3.6V | 142-PBGA 1mm Pitch |
The UT8MRQ4G32B is a high reliability space grade 4Gbit Parallel non-volatile Spin Transfer Torque (STT) MRAM.
Screened and qualified to the NASA PEM INST-001 requirements for plastic encapsulated microcircuits. Frontgrade assured comprehensive Single Event Effects characterization.
Features:
- High Density 4Gbit
- High Endurance: Unlimited Read/1016 Writes Cycles
- Premier Retention: (20 years @ 85°C, 10 years at 125°C)
- Standard Parallel Interface (45ns read/write cycle time)
- High Reliability: (multibit embedded error correction)
- Soft Error Immune
- No Wear Leveling Required
- Hardware and Software Data Protection with Low Voltage Write Inhibit
- Provided with Frontgrade’s Radiation Assurance
Applications:
- Boot Code, OS/Code Storage, ScratchPAD, Execute Memory
- Reconfigurable computing image storage
- Ideal for applications needing low power, infinite endurance requiring the ability to store and retrieve data without incurring large latencies.
Operational Environment:
- Temperature Range: -40°C to +125°C*
- Total Dose: 100 krads (Si)
- SEL Immune: ≤ 60 MeV-cm2/mg at 65°C
- SEU & SEFI Immune: ≤ LET 37 MeV-cm2/mg
Physical:
- 142-PBGA unleaded (SAC305) or leaded (63Sn 37Pb)
- 15mm x 17mm x 1.5mm
Power:
- Low Power: (50ma per Gbit active)
- VCC: 2.70V – 3.60V, VCCIO 1.8V – 3.3V
Qualifications:
- Frontgrade’s Space PEM L1 and L2 Manufacturing and Qualification Flows– based on NASA-PEM-INST-001