UT8MRQ2GB 2Gb DQPSI MRAM
| Part Number | Flight Grade | LET (MeV-cm^2/mg) | TID krad(Si) | Density | Configuration | Access Time | Supply Voltage | Package |
|---|---|---|---|---|---|---|---|---|
| UT8MRQ2GB | PEM INST-001 Level 2 | ≤37 | 100 | 2Gb | Dual-QSPI | 54MHz SDR40MHz DDR | 2.7V - 3.6V | 96-PBGA 1mm Pitch |
The UT8MRQ2GB is a high reliability space grade 2Gbit Dual QSPI non-volatile Spin Transfer Torque (STT) MRAM.
Screened and qualified to the NASA PEM INST-001 requirements for plastic encapsulated microcircuits. Frontgrade assured comprehensive Single Event.
Features:
- High Density: 2Gbit
- High Endurance: Unlimited Read/1016 Writes Cycles
- Premier Retention: (20 years @ 85°C, 10 years at 125°C)
- Interface: Dual-Quad SPI – support 8-bit wide transfer
- Dual QPI (4-4-4) – up to 54MHz SDR
- Dual QPI (4-4-4) – up to 40MHz DDR
- High Reliability: (multibit embedded error correction)
- Soft Error Immune
- No Wear Leveling Required
- Hardware and Software Data Protection with Low Voltage Write Inhibit
- Provided with Frontgrade’s Radiation Assurance
Applications:
- Versal Boot RAM (write protected memory)
- OS/Code Storage, ScratchPAD, Execute Memory
- Reconfigurable computing image storage
- Ideal for applications needing low power, infinite endurance requiring the ability to store and retrieve data without incurring large latencies.
Operational Environment:
- Temperature Range: -40°C to +125°C
- Total Dose: 100 krads (Si)
- SEL Immune: ≤ 37 MeV-cm2/mg at 65°C
Physical:
- 96-PBGA unleaded (SAC305) or leaded (63Sn 37Pb)
- 20mm x 20mm x 1.5mm
Power:
- Low Power: (50ma per Gbit active)
- VCC: 2.70V – 3.60V, VCCIO 1.8V – 3.3V
Qualifications:
- Frontgrade’s Space PEM L1 and L2 Manufacturing and Qualification Flows– based on NASA-PEM-INST-001