UT81NDQ512G8T 4Tb NAND Flash
| Part Number | Flight Grade | LET (MeV-cm^2/mg) | TID krad(Si) | Density | Configuration | Endurance | Supply Voltage | Package |
|---|---|---|---|---|---|---|---|---|
| UT81NDQ512G8T | PEM INST-001 Level 2 | ≤60 | 50 | 4Tb TLC1.33Tb SLC | 512 x 8 | 40K Program/Erase Cycles (SLC Mode) 3K Program/Erase Cycles (TLC Mode) | 3.3V | 132-PBGA 1mm Pitch |
Frontgrade offers the highest density and highest performing NAND device in the space industry.
The UT81NDQ512G8T, 4Tb NAND flash based on the Triple-Level Cell (TLC) NAND technology delivers 32 times the density of the closest competing device available in a single industry standard JEDEC 132 BGA package.
The UT81NDQ512G8T is Open NAND Flash Interface (ONFI) 4.0 compliant and supports up to 667MT/s throughput (read/write) per pin. With access to unparalleled storage capacity, designers can significantly increase sensor and digital signal processing throughput in space instruments such as solid-state drives and recorders, reconfigurable computing systems and imaging and communications data buffering applications.