UT8SD4MQ2G72 18GB DDR4
| Part Number | Flight Grade | TID krad(Si) | Event Rate | Density | Configuration | Speed | Supply Voltage | Package |
|---|---|---|---|---|---|---|---|---|
| UT8SD4MQ2G72 | PEM INST-001 Level 2 | 100 | 4,000 yrs MTTF GEO (Adams 90%, 100 mil Al) | 16GB + 2GB ECC | 2G x 72 | 2400 MT/s @CL 18-18-18 | 1.2V | 266-PBGA 1mm Pitch |
The UT8SD4MQ2G72 is an ultra-high-density, space-grade 18GB (16GB + 2GB ECC) DDR4 DRAM volatile memory.
Screened and qualified to the NASA PEM INST-001 requirements for plastic encapsulated microcircuits.
Features:
- PC4-19200 UDIMM equivalent
- 18 GB Density (16GB + 2GB ECC)
- 2Gx72 configuration (9 die)
- Dedicated RESET each die
- Supports die SEFI recovery & maintain module availability
- Command/Address (CA) parity
- Data bus inversion supported
- Up to 2400 MT/s data rate
- Maximum Power Savings Mode supported
- Low power auto self refresh
- Thermally enhanced packaging technology
- 1.2V VDD & VDDQ
- 2.5V VPP
Applications:
- High-performance computing
- Processing data storage for AI & ML
- RF signal processing data storage
- Buffering data for SSDs
- Operational Environment: Target Temp Range: -40°C to +125°C
- Target TID: 100 krad(Si)
- SEL: 4,000 yrs MTTF GEO; >120,000 yrs MTTF LEO
- SEU: 2.23E-14 errors/bit-day (LEO)
- SEFI: High current: 1.18E-4 events/device-day (LEO)
- Dynamic: 4.34E-3 events/device-day (LEO)
Physical:
- 266-pin (14x19) PBGA, 15 mm x 20 mm x 2.3 mm, 1.5gm
- 1.0 mm pitch
Power:
- 200mW burst READ/WRITE power per die
- est. ThetaJ-C < 5 °C/W
Flight Levels:
- NASA EEE-INST-002 (PEM-INST-001) Level 2
- Frontgrade Space PEM QD
Download the DDR4 Radiation Report
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